Infineon adds 650V CoolGaN bidirectional switch
Infineon Technologies is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, capable of actively blocking voltage and current in both directions.
Featuring a common-drain design and a double-gate structure, it uses Infineon's gate injection transistor (GIT) technology. The device serves as a highly efficient replacement for traditional back-to-back configurations commonly used in converters.
The bidirectional CoolGaN switch is said to offers several key advantages for power conversion systems. By integrating two switches in a single device, it simplifies the design of cycloconverter topologies, enabling single-stage power conversion, eliminating the need for multiple conversion stages. This leads to improved efficiency, increased reliability, and a more compact design.
BDS-based microinverters also benefit from higher power density and reduced component count, which simplifies manufacturing and reduces costs. Additionally, the device supports advanced grid functions such as reactive power compensation and bidirectional operation, according to the company.
As a result, this solution holds potential across a wide range of applications, including microinverters, energy storage systems, EV charging, data centres, and motor control.
