Loading...
News Article

Navitas adds new GaNSense motor drive ICs

News
GaN ICs with bi-directional lossless current sensing are smaller and more efficient

Navitas Semiconductor has announced a new family of GaNSense motor drive ICs targeting home appliances and industrial drives up to 600 W.

Specifically designed for motor drive applications, this fully integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing, and autonomous protection. Compared to legacy silicon IGBT solutions, this results in a 4 percent higher efficiency, 40 percent PCB footprint reduction, and 15 percent lower system cost.

Key features include bidirectional lossless current sensing, which measures both positive and negative currents. This is critical in motor drives, given recirculating currents in the reverse direction between switching coil phases. The lossless sensing eliminates the need for external shunt resistors, resulting in higher efficiency, improved reliability, and a more compact design.

Turn-on and turn-off slew rates are fully adjustable, allowing designers to optimise EMI, performance, and maximise efficiency. The autonomous freewheeling function switches on the GaN IC upon detection of reverse current to reduce conduction losses, maximise efficiency, and reduce the size and cost of heatsinks.

The GaNSense Motor Drive IC family also includes several safety features such as high-and-low-side short circuit protection, over-temperature protection (OTP), and 2kV ESD on all pins.

The 650V family starts with NV6257 (2 x 170 mΩ, PQFN 6x8), NV6287 (2 x 170 mΩ, PQFN 8x10), and NV6288 (2 x 120 mΩ, PQFN 8x10), supporting drives up to 600 W.

Target applications focus on motor drives up to 600W, including air conditioners, heat pumps, washing machines, dryers, dishwashers, refrigerators, and hair dryers. For low-power industrial drives, applications range from pumps to circulators and fans.

The GaNSense Motor Drive ICs will be on display at PCIM 2025 (May 6th—8th, 2025).

Navitas adds new GaNSense motor drive ICs
LITEON uses CoolMOS 8 MOSFETs for servers
Alpha and Omega unveils Mega IPM-7 modules
New gate driver enables high-performance powertrains
AKM and SAL integrate current sensor into power module
SemiQ to show latest SiC tech at PCIM
Infineon launches CoolSiC MOSFET 750V G2
Wise-integration presents OBC demo board
SMD Semi opens R&D hub at CSA Catapult
Enhancing safety when switching SiC MOSFETs
Fraunhofer IAF reveals novel bidirectional GaN switches
Nexperia expands CFP2-HP Schottky diode range
'Sunny Central FLEX' system uses latest SiC tech
MacDermid Alpha shows next gen bond pads at PCIM
Rohm develops new high power density SiC modules
NCT achieves record Ga₂O₃ performance
Scientists identify new material for wearable devices
Littelfuse Introduces gate driver for high-frequency power
Taiwan Semi HV rectifiers meet AEC-Q101
Navitas to show GaN and SiC advances at PCIM
Microchip completes rad-hard MOSFET family
Vishay increases range of surface mount rectifiers
Polar signs GaN-on-Si agreement with Renesas
Infineon adds new IGBT for EVs
Allegro announces XtremeSense TMR current sensors
Bosch and Arrow extend distribution agreement
Mitsubishi to ship full-SiC and hybrid-SiC SLIMDIP samples
First 2kA protection thyristor in DO-214AB package
Avnet Silica at PCIM Europe
Navitas qualifies GaNSafe to AEC-Q100 and AEC-Q101
Diodes announces new SiC Schottky devices
Microchip Launches High-Reliability BR235 and BR235D Series of Power Relays

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: