Polar signs GaN-on-Si agreement with Renesas
Polar Semiconductor, a US-owned merchant foundry, has sighed a deal with Renesas Electronics to license the Japanese firm's GaN-on-Si D-Mode GaN-on-Si technology.
As part of this agreement, which is to ensures the US has a reliable, domestic source for this semiconductor technology, Polar will fabricate high voltage 650V class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in Minnesota.
Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across automotive, data centre, consumer, industrial, and aerospace and defence markets. The agreement ensures the US has a reliable, domestic source for this cutting-edge semiconductor technology.
Surya Iyer, president and COO of Polar Semiconductor said: “This licensing and commercial production agreement underscores our commitment to strengthening the domestic semiconductor ecosystem. GaN is a game-changing technology for power and RF, and with Renesas as our partner, we are well-positioned to ramp commercial production, secure key defense programs, and drive the next wave of semiconductor innovation.”
“We are excited to partner with Polar to scale our proven GaN technology to 200mm wafers and leverage our know-how across broad power conversion markets ranging from infrastructure and AI to energy & industrial to e-Mobility & xEVs to high-value IoT,” said Chris Allexandre, SVP & GM, power products group, at Renesas. “This collaboration ensures a strong, US-based manufacturing capability for GaN products, provides multi-sourcing to our customers, and meets the growing demand for high-performance power solutions.”
