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40V GaN FET targets legacy silicon strongholds

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EPC's latest power transistor designed to displace low-voltage silicon MOSFETs

Efficient Power Conversion (EPC) has announced the availability of the EPC2366, a 40V, 0.8 mΩ GaN device designed to displace legacy low voltage silicon MOSFETs in demanding applications such as high-performance DC-DC converters and synchronous rectifiers.

The company describes the new devices as having industry-leading RDS(on) x QG figure of merit (10 mΩ·nC), zero reverse recovery, and excellent thermal performance, delivering higher efficiency, faster switching, and greater power density.

The EPC2366, which comes in a compact 3.3 mm x 2.6 mm PQFN package, is suitable for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.

“With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” said Alex Lidow, EPC CEO and co-founder.

Engineering samples are available for qualified designs.


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