Enhancing safety when switching SiC MOSFETs
Toshiba Electronics Europe has launched a highly integrated gate driver photocoupler suitable for driving SiC MOSFETs in industrial equipment like industrial inverters, uninterruptible power supplies (UPS), and PV inverters.
The TLP5814H features a built-in active Miller clamp circuit that helps improve system safety and lower overall solution size by minimising the number of additional external components required.
The Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sink current rating of 6.8A. These features help to prevent the self-turn-on phenomenon associated with some power devices like SiC MOSFETs and IGBT which are sensitive to changes in gate voltage, according to Toshiba.
The gate driver photocoupler can provide a maximum peak output current of +6.8/-4.8A with rail-to-rail output, which helps to improve system switching performance while ensuring stable operation. An internal Faraday shield ensures common-mode transient immunity of ±70kV/µs (min).
TLP5814H can operate reliably in temperatures ranging from -40 to 125°C due to the enhanced optical output of the infrared light emitting diode (LED) on the input side and an optimised high-gain, high-speed light-detecting photodiode array, which helps to improve optical coupling efficiency.
The TLP5814H is offered in a small SO8L package measuring5.85 × 10 × 2.1mm. It has a minimum creepage distance of 8.0mm which makes it suitable for use in applications requiring high insulation performance.
