IQE and X-FAB sign GaN power collaboration
IQE, a maker of compound semiconductor wafer products, and the analogue/mixed signal foundry X-FAB have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.
With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will build on IQE's GaN epitaxy design and process expertise along with X-FAB's technology development and device fabrication capabilities to offer an optimised technology and substrate combination for automotive, data centre and consumer applications.
The collaboration is designed to provide fabless semiconductor companies with a leading-edge, off-the-shelf GaN platform, accelerating their innovation cycles and time-to-market. The technology will also serve as a foundation for future product development extending beyond 650V to address the growing market demand for Power Electronics.
Jutta Meier, IQE's interim CEO and CFO of IQE said: "We are excited to join forces with X-FAB to develop a world-class GaN Power foundry solution in Europe, providing outsourced optionality for our fabless customers. Building on our GaN epitaxy expertise and recent investment in additional GaN reactor capacity, this agreement aligns with our GaN diversification strategy, expands our customer reach and accelerates time-to-market for GaN Power applications."
Jörg Doblaski, CTO at X-FAB, said: "By combining our long-standing expertise in device fabrication and design enablement with IQE's epitaxy leadership, we are creating a unique, turnkey GaN Power platform. In addition to our existing GaN technology, this collaboration provides a compelling alternative to existing supply chain models and strengthens Europe's position in next-generation Power semiconductor technology."
