Rohm develops new high power density SiC modules
Rohm has developed new 4-in-1 and 6-in-1 SiC muolded modules in the HSDIP20 package optimised for PFC and LLC converters in onboard chargers (OBC) for xEVs.
The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into the module package, reducing the design workload and enabling the miniaturisation of power conversion circuits in OBCs and other applications.
Rohm says its HSDIP20 package addresses the technical challenges around the demand for higher output from OBCs and DC-DC converters, alongside the need for miniaturisation and lighter weight for these applications. These have become difficult to overcome with discrete configurations.
The HSDIP20 features an insulating substrate with a high level of heat dissipation that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit using six discrete SiC MOSFETs with top-side heat dissipation to Rohm’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation).
Rohm says this level of heat dissipation supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules.
As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52 percent compared to top-side cooled discrete configurations, greatly contributing to the miniaturisation of power conversion circuits in applications such as OBCs.
