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Navitas qualifies GaNSafe to AEC-Q100 and AEC-Q101

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Qualification to both standards ensures that the discrete power FET stage and combined IC solution meet stringent auto specs

Navitas Semiconductor has qualified its GaNSafe ICs for both AEC-Q100 (packaged integrated circuits) and AEC-Q101 (discrete semiconductors) for automotive applications.

The company says qualification to both standards ensures that both the discrete power FET stage and the combined IC solution meet these stringent specifications.

To support the qualification, Navitas has created a reliability report (see above) that analyses over seven years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers.

The GaNSafe family integrates control, drive, sensing, and critical protection features. Short-circuit protection is 350ns max latency, and there is 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.

Additionally in March 2025, Navitas unveiled the world’s first production released 650V Bi-Directional GaNFast ICs with IsoFast Drivers to enable the transition from two-stage to single-stage topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion. This would allow next-generation single-stage OBCs to provide bi-directional charging in a high-efficiency, extremely compact solution – which eliminates bulky capacitors and input inductors.

“Our latest reliability report is the culmination of years of innovation and field experience,” said Gene Sheridan, CEO and co-founder of Navitas. “With more than 250 million units shipped, over 2 trillion field devices hours and a cumulative field failure rate that is now approaching 100 parts per billion, we’re leading the charge in making GaN the go-to technology for EV power systems.”

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