IceMOS closes $22m funding round to launch new MOSFET tech
Arizona-based semiconductor manufacturer IceMOS Technology has completed Series E funding from a London-based investor, 57 Stars LLC, and earlier stage US investors.
The investment will fund the launch of a patented power semiconductor technology called mSJMOS, which integrates silicon MEMS manufacturing techniques with mature node CMOS Super-junction power MOSFET structures. The resultant MOSFETs deliver dramatic semiconductor energy efficiency, according to IceMOS.
Samuel J. Anderson, MBE, IceMOS technology founder and chairman said: "The merging of mSJMOS structures and MEMS manufacturing techniques presents a revolutionary silicon-based technology that can compete with wideband gap devices at 650 Volts, 750V, 900V, and 1200V.”
Headquartered in Paradise Valley, Arizona, the company has a manufacturing centre in Northern Ireland, and a design centre in Tokyo, Japan. Part of the investment will enable IceMOS to increase strategic manufacturing in Northern Ireland, device design capability, applications engineering, marketing and sales worldwide as it starts preparation to launch mSJMOS platforms.
