Enphase benefits from 600V CoolMOS 8 MOSFETs
Energy-efficiency increased and MOSFET-related costs reduced with 600 V CoolMOS 8
Infineon has announced that its 600 V CoolMOS 8 high-voltage superjunction (SJ) MOSFET product family has allowed Enphase Energy, a supplier of microinverter-based solar and battery systems, to simplify its system design and reduce assembly costs.
By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS(on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device efficiency and boosts power density. In addition, the company achieved MOSFET related cost savings.
“Collaborating with Infineon has allowed us to leverage their CoolMOS 8 SJ MOSFET technology to enhance the performance and cost-effectiveness of our microinverter systems,” said Aaron Gordon, SVP and general manager of the Systems Business Unit at Enphase Energy.
The CoolMOS 8 SJ MOSFETs have an 18 percent lower gate charge than the CFD7 and 33 percent lower than the P7 series. A reduced gate charge allows for less electric charge to be applied to the gate of a MOSFET to switch it from the off state (non-conducting) to the on state (conducting), enabling a more energy-efficient system performance.
Additionally, the CoolMOS 8 SJ MOSFETs have the quickest turn-off time in the market and their thermal performance has been improved by 14 to 42 percent compared to the previous generation. The 600 V CoolMOS 8 SJ technology is equipped with an integrated fast body diode and is available in SMD-QDPAK, TOLL, and Thin-TOLL 8x8 packages, making it suitable for a wide range of consumer and industrial applications.
Samples for the portfolio extension of 600 V CoolMOS 8 SJ MOSFETs and 650 V CoolMOS 8 SJ MOSFETs are available from early April on.
