Magnachip launches two new Gen6 650V IGBTs
Magnachip Semiconductor has announced the launch of two new 6th-generation (Gen6) 650V IGBTs, specifically designed for solar inverters.
The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, are said to demonstrate outstanding performance by passing high-voltage, high-humidity and high-temperature reverse bias (HV-H3TRB) tests. These products offer dependable reliability in industrial equipment operating under extreme conditions, including elevated temperatures and humidity.
Additionally, integrated fast recovery anti-parallel diodes ensure swift removal of residual current, reducing switching losses in applications while supporting an operating temperature range of up to 175°C.
Of the two new products, the MBQ40T65S6FHTH features high conduction loss reduction. Compared to the previous generation, this IGBT decreases conduction loss by approximately 25 percent and boosts system efficiency by about 15 percent in 15kW solar inverters.
The MBQ40T65S6FSTH is engineered to significantly reduce switching loss. It cuts switching loss by 15 percent and conduction loss by approximately 8 percent compared to its predecessor, enhancing system efficiency by about 11 percent in 3kW solar inverters.
With these performance upgrades, the new IGBTs are suitable for applications that demand high reliability and efficiency, such as solar inverters, industrial motor drives, power supply units and uninterruptible power supplies.
"In the second half of this year, we plan to introduce a broader range of Gen6 650V IGBT products with current ratings from 5A to 75A, as part of our strategy to significantly expand our pipeline of new-generation Power products," said YJ Kim, CEO of Magnachip.
