Toshiba 600V MOSFET improves efficiency
Toshiba Electronics Europe has launched an N-channel power MOSFET to address the growing demand for improved efficiency in power supply circuits.
The new TK024N60Z1 uses the DTMOSVI 600V series process with a super junction structure to achieve low on-resistance and reduced conduction losses.
Applications include servers in data centres, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators.
The TK024N60Z1 has a drain-source on-resistance RDS(ON) of 0.024Ω (max), which is the lowest in the DTMOSVI 600V series. It also improves power supply efficiency, which reduces heat generation. Combined with the TO-247 package, which delivers high heat dissipation, the TK024N60Z1 offers good heat management characteristics.
Like other MOSFETS in the DTMOSVI 600V series, the TK024N60Z1 benefits from an optimised gate design and process. This reduces the value of drain-source on-resistance per unit area by approximately 13 percent. More importantly, drain-source on-resistance × gate-drain charge is reduced by approximately 52 percent, compared to Toshiba’s conventional generation DTMOSIV-H series products with the same drain-source voltage rating.
This means the DTMOSVI series, including the TK024N60Z1, offers a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.
Toshiba offers tools that support circuit design for switched-mode power supplies. These include the G0 SPICE model, which quickly verifies circuit function, and the highly accurate G2 SPICE models that reproduce transient characteristics.
