Rohm launches 650V GaN HEMT in TOLL package
Rohm has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package - a packaging technology increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems.
For this launch, the package manufacturing has been outsourced to ATX.
Rohm began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package.
This time, Rohm has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen Rohm’s 650V GaN HEMT package lineup - meeting the market demand for smaller and more efficient high-power applications.
The new products are said to achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss).
Under a collaboration announced on December 10, 2024, front-end were processes are carried out by TSMC. Back-end processes are handled by ATX. On top, Rohm plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, Rohm says it plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
