SemiQ adds 1200V third gen SiC MOSFET
SemiQ Inc, a US SiC company, has announced the QSiC 1200V MOSFET, a third-generation device that shrinks die size while improving switching speeds and efficiency. It will be on display for the first time at the Applied Power Electronics Conference (APEC) in Atlanta, March 16-20, 2025.
The device is 20 percent smaller versus QSiC’s second-generation SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. SemiQ is targeting a range of markets including EV‑charging stations, solar inverters, industrial power supplies and induction heating.
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to 1646 µJ and has a low on-resistance (RDS,on) of 16.1 mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8 mm, which includes a reliable body diode and a driver-source pin for gate driving.
High-quality Known Good Die (KGD) testing has been conducted using UV tape and Tape & Reels, with all parts undergoing testing and verification at voltages exceeding 1400V, as well as being avalanche tested to 800 mJ. Reliability is further improved through the device’s 100 percent wafer-level gate oxide burn-in screening and 100 percent UIL testing of discrete packaged devices.
The device has been developed to have a low reverse recovery charge (QRR 470 nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9 mm), improving electrical insulation, voltage tolerance and reliability.
Timothy Han, president at SemiQ said: “The move to Gen3 SiC further increases the benefits of SiC MOSFETs over IGBTs. These devices not only deliver vastly improved performance, but cut die size and cost versus previous generations. As a result, the launch of the QSiC 1200V opens the technology, and its benefits, to a far greater range of applications. The device delivers industry leading performance figures, notably on gate threshold voltage, and we’re delighted to be demonstrating this first at APEC.”
The QSiC 1200V MOSFETs has a continuous operational and storage temperature of -55degC to 175degC. It has a recommended operational gate-source voltage of -4/18 V, with a VGSmax of -8/22 V, and a power dissipation of 484 W (core and junction temperature 25degC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26degC per watt (40degC per watt junction to ambient). Its Zero gate voltage drain current is 100 nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21 ns with rise time of 25 ns; its turn-off delay time is 65 ns with a fall time of 20 ns.
An increased range of resistances is available in bare-die and TO-247 4L packages with the following options: 16 mΩ: GP3T016A120X / GP3T016A120H; 20 mΩ: GP3T020A120X / GP3T020A120H; 40 mΩ: GP3T040A120X / GP3T040A120H; 80 mΩ: GP3T080A120X / GP3T040A120H
Both the 16 mΩ (AS3T016A120X / AS3T016A120H) and 40 mΩ (AS3T040A120X / AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.
