TI adds first 200V rad-hard GaN FET drivers
Texas Instruments has announced a new family of radiation-hardened and radiation-tolerant half-bridge GaN FET gate drivers.
This family of gate drivers includes the industry’s first space-grade GaN FET driver that supports up to 200V operation. The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels.
“Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI.
“Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”
The 200V GaN FET gate driver is suitable for propulsion systems and also input power conversion in solar panels. The 60V and 22V versions are intended for power distribution and conversion across the satellite.
TI's GaN FET gate drivers offer different space-qualified packaging options for the three voltage levels, including: Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, respectively.
John Dorosa, a TI systems engineer, will present 'How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge' on Tuesday, March 18, 2025 at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature TI’s TPS7H6003-SP gate driver.
Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP and TPS7H6005-SEP are available. Preproduction quantities of the TPS7H6015-SEP and TPS7H6025-SEP are also available, with the TPS7H6005-SP, TPS7H6015-SP and TPS7H6025-SP available for purchase by June 2025.
Development resources include evaluation modules for all nine devices, as well as reference designs and simulation models.
