Vishay to show latest SiC MOSFETs at APEC
Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied Power Electronics Conference and Exposition (APEC) 2025, March 16-20 in Atlanta, Georgia.
These devices deliver on-resistances of 45 mΩ, 80 mΩ, and 250 mΩ in standard packages for industrial applications, with custom products also possible.
In addition, Vishay will provide a portfolio roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω.
Vishay's SiC platform is based on a proprietary MOSFET technology — enabled through the company's acquisition of MaxPower Semiconductor . — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.
At APEC 2025, Vishay will also be offering a variety of product-focused demonstrations including a 48 V eFuse featuring TrenchFET MOSFETs designed to handle a continuous current up to 100 A and operate continuously at maximum current with less than 14 W of losses. Another demo will be a 1 kW, 48 V / 12 V buck-boost converter featuring two module power stages — each rated for 500 W — in a compact form factor.
