Infineon adds to rad-tolerant MOSFET range
Infineon Technologies has added P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for Low-Earth-Orbit (LEO) space applications.
The new devices are part of Infineon’s expanding portfolio designed for next-generation Space applications, providing cost-optimised radiation-tolerant MOSFETs that enable engineers to achieve faster time-to-market using smaller and lighter weight components with radiation performance suitable for missions lasting two to five years.
“Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable rapid deployment and cost optimisation,” said Chris Opoczynski, SVP and general manager, HiRel business, power and sensor systems division, Infineon.
The new 60 V P-channel MOSFET complements the already available 60 V and 150 V N-channel devices, all offered in plastic packaging, which is cheaper than traditional hermetic packaging used in rad-hard devices (and can be produced in higher volumes using standard manufacturing practices).
The radiation-tolerant discretes are qualified for space applications according to the relevant tests of the AEC-Q101 standard. Additional package tests such as outgas and salt atmosphere tests are included as part of the qualification, and they are rated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionising Dose (TID) of 30 to 50 krad (Si).
The operating temperature rating is -55 °C to 175 °C (maximum). New technologies, like the patented CoolMOS superjunction technology used for the N-channel MOSFETs enables these FETs to offer fast switching capabilities as compared to alternative solutions, according to the company.
Infineon offers four different N-channel MOSFETs, each optimised for specific tasks. Engineers can select between two voltage versions – 60 V and 150 V along with the 60V P-channel, providing the flexibility to suit different power needs.
Infineon is developing gate drivers, and GaN HEMTs as part of the rad-tolerant series.
