Nexperia 1200 V SiC MOSFETs now in top-side cooled X.PAK
Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging called X.PAK.
This package, with its compact form factor of 14 mm x 18.5 mm, is said to combine the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation. This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance.
The switches are suitable for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible Power Supplies (UPS). Additionally, they are well-suited for electric vehicle charging infrastructure, including charge piles.
Nexperia says that X.PAK package enhances the thermal performance of its SiC MOSFETs by reducing the negative impacts of heat dissipation via the PCB. Furthermore, the new X.PAK package enables low inductance for surface mount components and supports automated board assembly.
"The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications," said Katrin Feurle, senior director and head of SiC Discretes & Modules at Nexperia.
“This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”
Nexperia says its SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38 percent over an operating temperature range from 25 °C to 175 °C.
The initial portfolio includes products with RDS(on) values of 30, 40, 60 mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17 mΩ will be released in April 2025. An automotive qualified SiC MOSFETs portfolio in X.PAK packaging will follow later in 2025, as well as further RDson classes like 80 mΩ.
