TI announces new integrated GaN stages
Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which it is showing at the Applied Power Electronics Conference (APEC), March 16-20, in Atlanta, Georgia..
One introduction is a family of integrated GaN power stages, the LMG3650R035, LMG3650R025 and LMG3650R070, in industry-standard TOLL packaging. These allow designers to take advantage of TI GaN efficiency without costly and time-consuming redesigns, according to TI.
The new power stages integrate a high-performance gate driver with a 650V GaN FET while achieving high efficiency (>98 percent) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.
Alongside these, TI has also announced the industry's first 48V integrated hot-swap eFuses with power-path protection to support data centre hardware and processing needs. These devices reach power levels beyond 6kW with intelligent system protection
At APEC 2025, TI is exhibiting a number of GaN-based power applications including:
Dell's 1.8kW server power-supply unit (PSU) with TI GaN power stages. The PSU features a GaN FET with built-in driver, protection and temperature reporting to achieve over 96 percent system-level efficiency.
Vertiv's 5.5kW server PSU: Part of Vertiv's PowerDirect Rack DC power system, the latest PSU from Vertiv is powered by TI GaN technology to deliver up to 132kW per rack.
Greatwall's 8kW PSU: To help designers increase power density, Greatwall and TI co-developed an 8kW open-rack PSU using TI GaN technology and TI C2000 real-time microcontrollers.
