Navitas Partners with Great Wall for 400V-DC power
GaN and SiC specialist Navitas Semiconductor has announced that its GaNSense power ICs will power GreatWall’s latest 2.5kW ultra-high power density DC-DC converter for AI data centres.
Great Wall has developed a 2.5kW DC-DC converter in 1/4 brick outline with what it claims is the world’s highest power density of 92.36W/cm³, up to 8 times higher than the output power of traditional silicon designs.
With a high half-load efficiency of 97.9 percent and a wide input range of 320-420 VDC, this solution achieves the increasingly stringent efficiency guidelines and regulations from Open Compute Project (OCP) and can be widely used in applications from AI data centres, telecommunications, and industrial equipment.
The DC-DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45 mΩ, is claimed to deliver 50 percent more power than prior designs, in an industry-standard, low-profile, low-inductance, 8 x 8 mm PQFN package for high-efficiency, high-density power systems.
GaNFast power ICs with GaNSense technology feature features such as loss-less current sensing and fast short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions.
NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. The GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.
"With its faster switching frequency and higher efficiency, GaN has become a key factor in unlocking the next generation of power supplies. We are very pleased to collaborate with Navitas, an industry leader in GaN technology, and successfully enable this industry-leading ultra-high-power density and ultra-high efficiency DC-DC converter,” said Michael Zhang, head of DC Product Line at Greatwall Power.
