Navitas to show GaN and SiC advances at PCIM
Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and industrial applications at the upcoming PCIM 2025 (6th – 8th May, 2025, in Nuremberg,Germany).
These include the first production-released 650 V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate-drivers, aimed at EV charging , solar inverters, energy storage, and motor drives. According to the company the devices enable the transition from two-stage to single-stage topologies.
The company will also be showing automotive-qualification high-power GaNSafe ICs, which have been qualified to both Q100 and Q101, unlocking higher power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications.
Alongside this release is a reliability report that analyses over seven years of production and field data and demonstrates GaN’s technology track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready.
Newly released GaNSense Motor Drive ICs will be on the stand too, with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
And GaNSlim: a new generation of highly integrated GaN power ICs that will further simplify and speed up the development of small form factor, high-power-density applications by offering high level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
SiC technology examples will include the automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology. And the latest release of SiCPAK power modules, which use advanced epoxy-resin potting technology and GeneSiC trench-assisted planar technology, to enable 5x lower thermal resistance shift for extended system lifetime.
Finally, combining both SiC and GaN technologies, the World’s highest power density AI power supply will be on show. It combines GaNSafe ICs and Gen-3 Fast SiC MOSFETs to enable 137 W/in3 and over 97 percent efficiency, according to the company.
