Littelfuse Introduces gate driver for high-frequency power
Littelfuse, has released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimised for high-frequency power applications, delivering superior switching performance and enhanced design flexibility.
The IXD2012NTR operates over a wide 10 V to 20 V voltage range and supports a high side switch of up to 200 V in a bootstrap operation. Its logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, ensuring seamless integration with a wide range of control devices. With a 1.9 A source and 2.3 A sink output capability, the IXD2012NTR provides robust gate drive currents ideal for high-speed switching applications.
The device's integrated cross-conduction protection logic prevents the high- and low-side outputs from turning on simultaneously, while simplifying circuit design through a high level of integration. Offered in a compact SOIC(N)-8 package and operational over a temperature range of −40 °C to +125 °C, the IXD2012NTR delivers reliable performance even in harsh environments.
"The IXD2012NTR is a direct drop-in replacement to popular, industry-standard gate driver devices," said June Zhang, product manager, Integrated Circuits Division of Littelfuse Semiconductor Business Unit. "This addition to our portfolio provides customers with a reliable, alternate source to meet demanding production schedules while delivering exceptional high-speed performance."
