SemiQ to show latest SiC tech at PCIM
SemiQ Inc, a developer of SiC solutions for efficient, high-performance, and high-voltage applications, will showcase several advances relating to high power SiC MOSFETs and modules at PCIM 2025.
PCIM takes place in Nuremberg from the 6th to the 8th May, with SemiQ partnering with Alfatec to demonstrate its technology.
This will include SemiQ’s recently launched third-generation SiC technologies and a wide range of modules to optimise systems for cost, resistance and thermal management.
SiC technologies on display at PCIM will include 1200 V SOT-227 MOSFET modules. These are based on SemiQ’s third-generation SiC, these modules are available with an RDSon of 8.4 to 39 mΩ and deliver exceptional switching speeds and reduced losses with low junction to case thermal resistance.
The company will also show automotive-qualified QSiC 1200 V MOSFETs which are available in a bare die and TO-247 4L package and have received AEC-Q101 qualification for automotive systems. Thes third-generation SiC devices enable smaller die sizes while improving switching speeds and efficiency and are available with an RDSon between 16 and 80 mΩ.
Also on show will be 1200 V full-bridge modules for solar inverters, energy storage and battery charging. These deliver up to 333 W of power with a continuous drain of up to 102 A and are said to set a new standard for power density and efficiency in demanding DC applications.
Finally, there will be 1200 V six-pack modules for cost-optimised systems. Tested to over 1350 V, with 100 percent wafer-level burn in, the modules are claimed to enable lower cost and more-compact system-level designs at large scale. Applications include AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging.
