Innoscience launches VGaN battery management chips
Innoscience Technology, a maker of GaN-on-Si power solutions, has launched a new generation of battery management system (BMS) solutions based on VGaN technology.
The company says that with no parasitic body diode and bidirectional control, bi-directional (VGaN) device can effectively replace two traditional MOS Silicon pairs.
A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts Innoscience’s new 100V VGaN product, the INV100FQ030A, which is packaged in a 4mm x 6mm2 FCQFN and offers a maximum on-resistance of 3.2mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. T
he 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode.
Denis Marcon, general manager, Innoscience Europe explains the benefits: “With just 16 VGaNs, we can replace 18 pairs of Silicon MOSFETs (36 in total), significantly reducing both the board area and system loop impedance. This optimisation not only enhances performance and reduces system size but also drives down the overall system cost, making it a more efficient and cost-effective solution for battery protection systems”.
Innoscience's 48V/180A high-side BMS solution is suitable for home batteries, portable charging station, e-scooters, e-bikes etc., optimising battery life and safety through efficient charge and discharge control. It is designed to reduce temperature rise and system costs while ensuring a compact, portable design, according to the company.
