RTX to develop UWBGS for DARPA
Raytheon, an RTX business, has been awarded a three-year, two-phase contract from DARPA to develop ultra-wide bandgap semiconductors, or UWBGS, based on diamond and AlN technology.
During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and AlN semiconductor films and integrate them onto electronic devices. Phase two will focus on optimising and maturing the diamond and AlN technology onto larger diameter wafers for sensor applications.
"This is a significant step forward that will once again revolutionise semiconductor technology," said Colin Whelan, president of Advanced Technology at Raytheon. "Raytheon has extensive proven experience developing similar materials such as GaAs and GaN for Department of Defense systems. By combining that pioneering history and our expertise in advanced microelectronics, we'll work to mature these materials towards future applications."
The material properties of UWBGS enable highly compact, ultra-high power radio frequency switches, limiters, and power amplifiers. Their high thermal conductivity also allows the ability to operate at higher temperatures and in more extreme environments.
The team's goal is to spearhead the development of these materials towards devices that are well suited for both existing and future radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonics.
Work on this contract is being conducted at the company's foundry in Andover, Massachusetts, USA.
