ST unveils next generation SiC
STMicroelectronics is introducing its fourth generation STPOWER SiC MOSFET technology, optimised for traction inverters, the key component of electric vehicle (EV) powertrains.
According to the company, its Generation 4 SiC MOSFETs feature a much lower on-resistance (RDS(on)) measured against prior generations, minimising conduction losses, and enhancing system efficiency. They also offer faster switching speeds, which translate to lower switching losses. Another benefit is extra robustness in Dynamic Reverse Bias (DRB) conditions, exceeding the AQG324 automotive standard.
ST says the new SiC MOSFET devices, which will be made available in 750V and 1200V classes, will improve energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs — key segments to help achieve mass market adoption.
The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and data centres, significantly improving energy efficiency for these growing applications.
ST has completed qualification of the 750V class of the fourth generation SiC technology platform and expects to complete qualification of the 1200V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750V and 1200V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers.
Roadmap
To accelerate the development of SiC power devices through its vertically integrated manufacturing strategy, ST is developing multiple SiC technology innovations in parallel to advance power device technologies over the next three years.
The fifth generation of ST SiC power devices will feature an innovative high-power density technology based on planar structure. ST says at the same time it's developing a radical innovation that promises outstanding on-resistance RDS(on) value at high temperatures and further RDS(on) reduction, compared to existing SiC technologies.
ST will attend ICSCRM 2024, the annual scientific and industry conference exploring the newest achievements in SiC and other wide bandgap semiconductors. The event, from September 29 to October 04, 2024, in Raleigh, North Carolina will include ST technical presentations and an industrial keynote on ‘High volume industrial environment for leading edge technologies in SiC’.
