Infineon develops first 300mm power GaN wafer
Infineon Technologies has succeeded in developing the world’s first 300 mm power GaN wafer technology, claiming to be the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment.
It believes the breakthrough will help drive the market for GaN-based power semiconductors. Production on 300 mm wafers compared to 200 mm technology, offers 2.3 times more chips per wafer.
“This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems,” said Jochen Hanebeck (pictured above), CEO of Infineon Technologies AG.
“The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of GaN. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and GaN.”
A significant advantage of 300 mm GaN technology is that it can utilise existing 300 mm silicon manufacturing equipment, since GaN and silicon are very similar in manufacturing processes.
Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach (Austria). The company is building on well-established existing production of 300 mm silicon and 200 mm GaN.
