Renesas announces 650V GaN FETs for power conversion
Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters.
Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs.
Offered in TOLT, TO-247 and TOLL package options, the devices are said to give engineers the flexibility to customise their thermal management and board design for specific power architectures.
The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices are built on the SuperGaN platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024.
The devices are produced on a die that is 14 percent smaller than the previous Gen IV platform, and achieve a lower RDS(on) of 30mΩ, reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM).
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, VP of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
