AOS introduces 25V MOSFET in Source-Down package
Alpha and Omega Semiconductor (AOS) has introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology.
Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI servers and data centre power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its centre gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimised.
The AONK40402 MOSFET’s DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319A with a maximum junction temperature rated at 175°C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency, according to AOS.
“AONK40202, which utilizes advanced DFN3.3x3.3 Source-Down technology, offers a reduction in power losses and delivers better thermal performance compared to traditional DFN3.3x3.3 Drain-Down packaging solutions. The AONK40202, with its lower on-state resistance (RDS(on)) and enhanced thermal performance, provides designers with the advanced technologies necessary to utilize PCB space more effectively.
"These features and many more in the AONK40202 are specifically designed to meet the increasing power density demands of AI servers,” said Peter H. Wilson, Sr. director of MOSFET product line at AOS.
