News Article
EPC Space announces 300V Rad-Hard GaN FET
New device targets high power and next generation systems for use in space
EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.
The EPC7030MSH, which is rated for 300V operation at LET = 63 MeV, and 250 V at LET = 84.6 MeV, addresses a need for efficient, compact, and robust front-end power conversion.
According to EPC, the device has the lowest RDS(on) and gate charge in its class, and delivers the highest power current rating among all 300 V rad-hard GaN FETs currently on the market.
These features suit it for use in front-end DC-DC converters that must operate under stringent thermal and radiation constraints.
