Mouser Stocking 1200V Gen 4 SiC FETs
Qorvo's UF4C and UF4SC 1200 V SiC FETs suit on-board chargers for EVs, industrial battery chargers, industrial power supplies, and DC-DC solar inverters
The distributor Mouser Electronics is now stocking the UF4C and UF4SC 1200 V SiC FETs from UnitedSiC (now part of Qorvo).
Part of the extensive line of high-performance SiC FETs, this fourth-generation family of devices is suited to power solutions in mainstream 800 V bus architectures in applications such as on-board chargers for EVs, industrial battery chargers, industrial power supplies, DC-DC solar inverters, and more.
The UF4C/SC SiC FETs provide designers with multiple on-resistance and package options. The 1200 V SiC FETs are offered in versions with on-resistance (RDS(on)) values of 23 mΩ to 70 mΩ and either a three-lead TO-247-3L package or a four-lead TO-247-4L package. The TO-247-4L package incorporates a Kelvin gate to deliver ultra-low gate charge and exceptional reverse recovery characteristics, enabling designers to switch inductive loads and any application requiring a standard gate drive.
All the devices in the UF4C/SC family can be safely driven with standard 0 V to 12 V or 15 V gate drive voltage, creating a suitable replacement for silicon IGBTs, FETs, or super-junction devices without changing the gate drive voltage. Other features of the UF4C/SC SiC FETs include a high threshold noise margin preserved with a true 5 V threshold voltage, reverse recovery, and a built-in ESD gate protection clamp.