DB HiTek announces 650V GaN HEMT process
DB HiTek, a 8-inch specialty foundry in Korean, is in the final stages of development of its 650V E-Mode GaN HEMT process. The company is also to offer a dedicated GaN MPW (multi-project wafer) program at the end of October.
A DB HiTek spokesperson commented: "DB HiTek is already recognised worldwide for its leadership in silicon-based power semiconductor technologies, including the development of the industry's first 0.18µm BCDMOS process. By adding GaN process capabilities, we are expecting to enhance the company's competitiveness with a broad technology portfolio."
650V E-Mode GaN HEMTs offer high-speed switching performance and operational stability, making them well-suited for EV charging infrastructure, power conversion systems in hyperscale data centres, and advanced 5G network equipment.
Following completion of the 650V GaN HEMT process, DB HiTek plans to roll out a 200V GaN process and a 650V GaN process optimised for IC integration by the end of 2026. Looking ahead, the company aims to expand its GaN platform across a wider voltage spectrum, aligned with market needs and customer requirements.
To support these initiatives, DB HiTek is expanding the cleanroom facilities of Fab2, located at Chungcheongbuk-do, South Korea. The expansion is expected to add capacity for approximately 35,000 8-inch wafers per month, supporting production of GaN, BCDMOS, and SiC processes. Upon completion, DB HiTek's total monthly wafer capacity will increase by 23 percent, from 154,000 to 190,000 wafers.
DB HiTek will participate in ICSCRM (The International Conference on Silicon Carbide and Related Materials) 2025, scheduled for September 15–18 at BEXCO in Busan. At this industry forum, DB HiTek will highlight progress in SiC process development alongside its GaN and BCDMOS technologies.
