Toshiba and SICC sign SiC MOU
Toshiba and SICC have signed a memorandum of understanding (MOU) under which they hope to work together to improve characteristics and quality of silicon carbide (SiC) power semiconductor wafers made by SICC, and enable expanded supply of stable, high-quality wafers from SICC to Toshiba.
Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and cars. This work includes reducing power losses in SiC devices and improving their reliability and efficiency. The proposed collaboration with SICC, a Chinese developer of SiC wafers, is expected to help drive forward improved solutions for various applications and to accelerate business expansion.
Since its founding in 2010, SICC has concentrated on producing single-crystal SiC wafers. Following its initial public offering in 2022, the first in China to focus on SiC, the company has expanded in market share. In 2024, it introduced the market's first 12-inch SiC wafer, and in 2025 it announced 12-inch wafers for all products, including n-type, semi-insulating, and p-type.
In the proposed collaboration with Toshiba, SICC says it aims to link SiC power semiconductor manufacturers’ requirements and expectations for SiC wafer element technology to improved wafer quality and reliability, and to contribute to the expansion of the SiC power semiconductor market.
Toshiba and SICC say they are still discussing specific collaboration details.
