Nexperia ASFETS target high-power 48V applications
Nexperia has introduced the latest additions to its portfolio of application-specific MOSFETs (ASFETs).
The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48V applications that require the use of several closely matched MOSFETs connected in parallel.
These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors.
According to Nexperia, the enhanced dynamic current sharing of the PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs means designers no longer need to over-specify MOSFETs or request tightly matched devices to provide a sufficient safety margin.
These switches offer a 50 percent lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a VGS(th) window that is up to 50 percent lower (0.6 V min-to-max). This benefit, combined with the low RDS(on) of 1.9 mΩ or 2.3 mΩ helps to provide high efficiency in power switching applications.
The new ASFET devices are available in the rugged, space-efficient 8 mm x 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.
