VisIC introduces 2nd generation GaN devices
VisIC Technologies has introduced ist 650V second-generation Gen 2 products, which represent a 33 percent shrink of die size compared to Gen 1+ and 50 percent to Gen 1.
With RDS(ON) values as low as 4 mΩ, Gen 2 are claimed to deliver high conduction efficiency, minimising power losses and reducing system thermal stress.
These D³GaN devices are engineered for next-generation EV inverters, on-board chargers, and high-performance power converters, enabling automakers to achieve higher driving ranges, smaller cooling systems, and overall lower system costs.
The new high power bare dice V04DI065R2X21 650V/4mOhm can be soldered or sintered on AMB/DBC substrates to increase reliability and performance. With a current capability of 230A the device can be used to increase power density in power modules for EV drive train inverter.
“From our first-generation devices to our latest Gen 2 GaN, VisIC has consistently focused on one clear goal: enabling the most efficient power electronics for electric vehicles and industrial applications,” said Tamara Baksht, CEO. “By reducing RDS(ON) with each new generation, we help our customers design systems that are not only more efficient but also more compact and cost-effective.”
