Validity of EPC Chinese GaN patent confirmed
Efficient Power Conversion Corporation (EPC) has announced that the Beijing IP Court has denied an appeal filed by Innoscience Technology, thereby reaffirming the validity of EPC’s Chinese Patent No. ZL201080015425.X, 'Compensated gate MISFET and method for fabricating the same' (the Compensated Gate patent).
Two of EPC’s patents covering enhancement-mode GaN FETs and their fabrication had been challenged by Innoscience (Suzhou) in China. The China National Intellectual Property Administration (CNIPA) had previously validated both patents in April and May 2024, but Innoscience requested reconsideration of the decision concerning the Compensated Gate Patent in.
“EPC’s innovations in GaN power devices reflect nearly 20 years of research and development,” said Alex Lidow, CEO and co-founder of EPC. “We welcome the Beijing IP Court’s decision as confirmation of the strength of our intellectual property.”
EPC says it continues to benefit from a decision by the US International Trade Commission, which ruled that Innoscience infringed EPC’s intellectual property. That ruling, which remains in full force and effect, led to an exclusion order barring the importation of infringing Innoscience products into the United States.
