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Toshiba introduces new MOSFET package

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SOP Advance(E) package enables lower loss and higher efficiency for industrial equipment, data centres, and base stations

Toshiba Electronics Europe has launched two new N-channel power MOSFETs, the 80V TPM1R908QM and the 150V TPM7R10CQ5. These latest offerings adopt Toshiba’s innovative SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations.

The SOP Advance(E) package is said to mark a substantial improvement over Toshiba’s existing SOP Advance(N) package, reducing package resistance by approximately 65 percent and thermal resistance by approximately 15 percent.

These package enhancements directly translate into better device performance. The 80V TPM1R908QM exhibits a reduction in drain-source on-resistance (RDS(ON)) of approximately 21 percent and channel-case thermal resistance (Rth(ch-c)) of approximately 15 percent when compared to Toshiba’s existing product, the TPH2R408QM, of same voltage rating.

Similarly, the 150V TPM7R10CQ5 achieves approximately 21 percent lower RDS(ON) and approximately 15 percent lower Rth(ch-c) than Toshiba’s existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification.

The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics. This combination ultimately achieves lower loss and higher efficiency in critical applications such as switched-mode power supplies for industrial equipment, including those powering data centres and communication base stations.

The TPM1R908QM features a drain-source voltage (VDSS) of 80V, a drain current (ID) of 238A (Tc=25°C), and a maximum RDS(ON) of 1.9mΩ (VGS=10V). The TPM7R10CQ5 offers a VDSS of 150V, an ID of 120A (Tc=25°C), and a maximum RDS(ON) of 7.1mΩ (VGS=10V). Both products have a channel temperature (Tch) of 175°C and a maximum Rth(ch-c) of 0.6°C/W (Tc=25°C). The SOP Advance(E) package typically measures 4.9mm × 6.1mm.

To further support circuit design for switched-mode power supplies, Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.


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