Vishay adds new 650V and 1200V SiC diodes
Vishay Intertechnology has introduced three new Gen 3 650V and 1200V SiC Schottky diodes in the compact, low profile SlimSMA HV (DO-221AC) package.
Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2 mm, the 1A VS-3C01EJ12-M3 and 2A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behaviour to increase efficiency in high speed, hard-switching power designs.
For high voltage applications, the high creepage distance provides improved electrical isolation, while their SlimSMA HV package features a moulding compound with a high CTI ≥ 600 to ensure excellent electrical insulation, according to Vishay.
For space-constrained designs, the diodes offer a low profile of 0.95 mm compared to 2.3 mm for competing SMA and SMB packages with a similar footprint.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 maintain a low capacitive charge down to 7.2 nC irrespective of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high frequency applications. In addition, the devices are said to have virtually no recovery tail, which further improves efficiency, while their MPS structure delivers a reduced forward voltage drop down to 1.30 V.
With a high operating temperature of +175 °C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 will include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies; energy generation and storage systems; industrial drives and tools; and X-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.
Samples and production quantities of the new SiC diodes are available now, with lead times of 14 weeks.
