300mm GaN roadmap "on track" says Infineon
Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for customers in Q4 of 2025.
This means it is the first semiconductor manufacturer to successfully develop 300mm GaN power wafer technology within its existing high-volume manufacturing infrastructure,
“Our fully scaled-up 300mm GaN manufacturing will allow us to deliver highest value to our customers even faster while moving towards cost parity for comparable silicon and GaN products,” said Johannes Schoiswohl, head of GaN Business Line at Infineon.
“Almost a year after the announcement of Infineon’s breakthrough in 300mm GaN wafer technology, we are pleased that our transition process is well on track and that the industry has recognized the importance of Infineon’s GaN technology enabled by the strength of our IDM strategy.”
Infineon’s manufacturing strategy relies on owning the entire semiconductor production process, from design to manufacturing and selling the final product.
The company’ says this in-house manufacturing strategy is a key differentiator providing several advantages such as high-quality, faster time-to-market as well as superior design and development flexibility. Infineon is committed to supporting its GaN customers and can scale capacity to meet their needs for reliable GaN power solutions.
Chip production on 300mm wafers allows 2.3 times more chips to be produced per wafer (compared to 200mm substrates). The company says its increased capabilities are needed as GaN power semiconductors are being rapidly adopted in industrial, automotive, consumer, and computing & communication applications, such as power supplies for AI systems, solar inverters, chargers and adapters or motor control systems.
Yole Group analysts expect the GaN revenue for power applications to grow by 36 percent annually to approximately US $2.5 billion by 2030.
