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Gate driver photocouplers enhance switching efficiency

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Latest Toshiba devices target SiC MOSFETs and IGBTs in green energy and factory automation applications

Toshiba Electronics Europe has extended its lineup to control 1A and 6A class gate drive currents for small- to medium-capacity MOSFET and IGBT gate drives.

The TLP579xH series meets the increasing demand for gate drivers that drive high-voltage power devices from the low-voltage control side through isolation, offering more accurate performance over a wide temperature range.

The series is suitable for driving SiC MOSFETs and IGBTs in green energy and factory automation applications, including industrial photovoltaic (PV) inverters, uninterruptible power supplies (UPSs), and electric vehicle (EV) charging stations, which operate in harsh thermal environments.

All three devices in the TLP579xH series are designed to drive small to medium capacity power devices as well as IGBTs.

The TLP5791H has a performance of -1.0/+1.0A for peak high-level/low-level output current (IOLH/IOHL), with an under voltage lock out (UVLO) threshold voltage (VUVLO+) of 9.5V (max.), a UVLO threshold voltage (VUVLO-) of 7.5V (min.), and a UVLO hysteresis voltage (VUVLOHYS) of 0.5V (typ.).

With the TLP5794H, the peak output current spans from -6.0/+4.0A for IOLH/IOHL, with a VUVLO+ of 13.5V (max.), a VUVLO- of 9.5V (min.), and VUVLOHYS of 1.5V (typ.).

The TLP5795H is capable of -4.5/+5.3A for peak high-level/low-level output current (IOLH/IOHL), with VUVLO+ of 13.5V (max.), a VUVLO- of 11.1V (min.), and VUVLOHYS of 1.0V (typ.).

The propagation delay time exhibits low temperature dependence, enabling stable operation within the practical range defined by factory automation equipment. Additionally, the TLP579xH series is a rail-to-rail output device that enables switching characteristics with less voltage drop from the power supply voltage. This capability is useful in applications that require circuits to operate at low voltages or to process signals across the entire range of supply voltages.

Furthermore, Toshiba has improved the light output of the input-side infrared LED and optimised the design of the light-receiving element (photodiode array) in the device compared to the current lineup. These enhancements increase the optical coupling efficiency of the product, enabling it to operate within a temperature range of -40°C to +125°C. Toshiba has also standardised the propagation delay time and propagation delay skew within this operating temperature range.

The TLP579xH series is housed in a small SO6L package. In addition, the new products feature a minimum creepage distance of 8.0mm and an isolation voltage of 5000VRMS, allowing them to be used in equipment that requires high isolation performance.


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