Infineon launches 1200V CoolSiC MOSFETs in Q-DPAK
Infineon has launched the CoolSiC MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package.
The new devices, which are designed for demanding industrial applications such as EV chargers, solar inverters, UPD, motor drives, and solid-state circuit breakers, are said to deliver optimised thermal performance, system efficiency, and power density.
The Q-DPAK package enhances thermal performance by enabling direct heat dissipation from the device’s top surface to the heatsink. This direct thermal path delivers significantly better heat transfer efficiency compared to traditional bottom-side cooled packages, enabling more compact designs. Additionally, the Q-DPAK package layout design allows for minimised parasitic inductance, which is critical for higher switching speeds.
Compared to previous generations, CoolSiC 1200 V G2 technology enables up to 25 percent lower switching losses for equivalent RDS(on) devices, thereby increasing system efficiency by up to 0.1 percent. Using Infineon's improved .XT die attach interconnection technology, the G2 devices achieve more than 15 percent lower thermal resistance and an 11 percent reduction in MOSFET temperature compared to G1 family products.
RDS(on) values range from 4 mΩ to 78 mΩ. Overload operation is up to a junction temperature (Tvj) of 200°C.
The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side cooling platform and are available now.
