iDEAL Semi announces 200V SuperQ-based MOSFETs
iDEAL Semiconductor has announced the first of its 200 V family of SuperQ-based MOSFETs has entered mass production, with four additional 200 V devices now sampling.
SuperQ is claimed to be the first major advance in silicon MOSFET technology in more than 25 years, breaking through long-standing limits in switching and conduction.
It delivers a step-change in performance and efficiency while preserving the core advantages of silicon: ruggedness, high-volume manufacturability, and proven reliability at 175 °C.
The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mΩ MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum RDS(on) of just 5.5 mΩ. This sets a new performance benchmark, delivering resistance that is 1.2x lower than the current market leader and 1.7x lower than the next-best competitor.
“By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over,” said Mark Granahan, CEO and founder of iDEAL Semiconductor. “These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward.”
Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.
