2000V CoolSiC Schottky diode simplifies design
To meet the needs of industrial applications transitioning to higher power levels using increased DC link voltage, Infineon has released the first discrete SiC Schottky diode with a breakdown voltage of 2000 V.
The 2000V G5 product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. This makes it suitable for higher DC link voltage applications such as in solar and EV charging applications.
The product family comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density, according to Infineon.
It also allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.
In addition, the CoolSiC Schottky diode 2000V G5 utilises the .XT interconnection technology that leads to lower thermal resistance and impedance, enabling better heat management. Furthermore, the robustness against humidity has been demonstrated in HV-H3TRB reliability tests. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.
Infineon says the 2000 V diode family is a good match with the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon introduced in spring 2024. The CoolSiC diodes 2000 V portfolio will be extended by offering them in the TO-247-2 package, which will be available in December 2024. A matching gate driver portfolio is also available for the CoolSiC MOSFETs 2000 V.
The CoolSiC Schottky Diode 2000 V G5 family in TO-247PLUS-4 HCC is available now. An evaluation board for product family is also available.
