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News Article

Swedish scientists build 500° C SiC bipolar op amp

First high temperature operation of fully integrated device

Scientists at the KTH Royal Institute of Technology in Sweden have built a monolithic bipolar operational amplifier fabricated in SiC technology with a 4H  crystal structure.

Published in the IEEE's Electron Device Letters, this is the first report on high temperature operation of a fully integrated SiC bipolar opamp. According to the team, it demonstrates the feasibility of this technology for high temperature analogue integrated circuits.

The op amp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25 to 500°C.

The measured closed loop gain is around 40 dB for all temperatures whereas the 3dB bandwidth increases from 270kHz at 25°C to 410kHz at 500°C. The opamp achieves 1.46 V/µs slew rate and 0.25 percent total harmonic distortion.

Full details of the work are detailed in 'A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology' by R. Hedayati et al, Electron Device Letters, IEEE  (Volume: 35,  Issue: 7)


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