Mitsubishi to build SiC fab
Company to respond to rapidly increasing demand for SiC power semiconductors for EVs and other low energy loss applications
Mitsubishi Electric has announced plans to build a new wafer plant to increase production of SiC power semiconductors. The company is responding to increasing demand for SiC chips for EVs as well as expanding markets for applications that require low energy loss, high temperature operation or high-speed switching..
The announcement means that the company will now invest around $2B (260 billion yen) in the five-year period to March 2026, which is double its previously announced investment plan. $756M (100 billion yen) will be used to construct a new 8-inch SiC wafer plant and enhance related production facilities.
The new factory, which will incorporate a facility in the Shisui area of Kumamoto Prefecture, will produce large-diameter 8-inch SiC wafers, introduce a clean room featuring state-of-the-art energy efficiency and high-level automated production efficiency. In addition, the company will enhance its production facilities for 6-inch SiC wafers to meet growing demand in this sector as well.
Mitsubishi will also invest approximately $75M (10 billion yen) in a new factory that will consolidate existing operations, currently dispersed throughout the Fukuoka area, for the assembly and inspection of power semiconductors. The company says the integration of design, development and production technology verification will greatly enhance the company's development capabilities and facilitate timely mass production in response to market demand.
The remaining $150M (20 billion yen), all new investment, will be targeted at equipment enhancements, environmental arrangements and related operations.