SK aims to deliver 650V GaN this year
SK Keyfoundry, an 8-inch fab in Korea, has announced that it is intensifying its efforts in developing GaN with the aim of delivering a product this year.
In 2022, the company formed a dedicated team to drive GaN process development. Recently, the company has secured new device characteristics of 650V GaN HEMT, and targets to finalise the development by the end of the year.
SK Keyfoundry said based on the 650V GaN HEMT, it plans to build a GaN portforlio that can offer a wide range of voltages for GaN HEMTs and GaN ICs.
"We are preparing for the next generation of power semiconductors in addition to our competitive high-voltage BCDs," said Derek D. Lee, CEO of SK keyfoundry. "We will also expand our power semiconductor portfolio to include not only GaN but also SiC in the future to establish ourselves as a specialised power semiconductor foundry."
The company expects that 650V GaN product will provide fabless customers in markets such as fast charging adapters, LED lighting, data centres and ESS, and solar microinverters with an advantage in developing premium products.
In addition to securing new customers, SK Keyfoundry says it plans to actively promote its 650V GaN HEMTs to a number of existing power semiconductor process-using customers who have expressed their interests in the technology.
