RF GaN-based devices heading for mainstream sub 3.5GHz applications?
GaN devices could reach more than 20 percent of the overall RF device market by 2020
Although RF GaN-based devices have improved in performance and yield, there's still a barrier preventing GaN-on-SiC from entering mainstream applications such as wireless telecom base stations or CATV, according to a new report 'RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2010-2020', by Yole Development available from Research and Markets.
The report provides analysis on applications, technical challenges and strategic initiatives related to the implementation of RF GaN for volume production. In sub-3.5 GHz range applications, GaN-on-SiC is still not as cost-effective as Si-LDMOS, say the authors, resulting in low market penetration. Macom and IQE, however, are expected to enter mass production using 6in and 8in GaN-on-Si substrates in two years time. IQE will offer Macom a significant level of mass production due to its existing production for other applications. The authors' analysis shows that GaN-on-Si could be implemented in two to five years within telecom base stations, military communications and CATV. In this optimistic scenario, RF GaN-based devices could see an increased penetration rate and reach more than 20 percent of the overall RF device market by 2020.
Over the last few years, the silicon LDMOS coverage of high-power RF amplification applications above 2GHz has decreased from 92 to 76 percent; the remaining 24 percent market share is mainly addressed by technologies such as GaAs pHEMT or HEMTs GaN. GaN HEMTs in wireless telecommunications provide a higher-power and higher-frequency alternative. From a system point of view, GaN is cost-competitive in applications over 3.5GHz. GaN devices continue to challenge silicon's dominant position in an industrial playground in which a Power Amplifier (PA) market size of over $1600 million is forecasted for 2020.
Today, several companies including CREE, Triquint/RFMD, Sumitomo, RFHIC, MACOM/Nitronex, Mitsubishi, NXP, and Microsemi have GaN device portfolios covering a wide range of applications. GaN has progressed significantly over the last five years; several thousand devices have been developed and implemented in applications such as radar, CATV, space applications with satellite communication, counter-IED jammers, CATV modules, 3G/4G base-stations, WIMAX/LTE PAs and general purpose applications.
In their nominal case,say the authors, RF GaN-based devices could reach more than 18 percent of the overall RF device market by 2020 (with 9 percent CAGR from 2013-2020).
