AIT unveils advanced 20 micron die"attach film
AI Technology (AIT) says it has solved one of the technically more challenging problems in wafer level semiconductor packaging.
The company says it can achieve conductive die"attach film adhesive (DAF) of 20 microns (µm) thickness.
While die"attach film adhesive (DAF) at the wafer level is becoming more prevalent in die"attach for memory modules in precision bonding and thin packages, thermally conductive and electrically conductive die"attach film is more limiting because of the challenging handling and performance issues for the thinner conductive DAF.
The picture above shows 20µm thick conductive DAF used for high power devices and concentrated solar die"attach applications.
AIT's conductive DAF is built on the same self"supporting die"attach film (DAF) adhesive technology that the company pioneered in the 1990's. AIT is now able to produce ESP8660"HK in 20µm thickness for power devices from microprocessors to concentrated solar die"attach modules.
This new thickness marks an improvement over AIT's 50µm thick ESP8660"HF which was first produced in 2005.
ESP866"HF can be produced in wafer"shape die"cut format and pre"laminated on dicing tape (DDAF) format up to widths of 450mm and lengths of 100 metres in AIT's clean room manufacturing environment housed in the company 's 16 acres facilities in Princeton Junction, New Jersey.
Not only is ESP8660"HK available in 20µm thickness, it is also developed for high glass transition requirements to facilitate faster wire"bonding at temperatures as high as 250°C. ESP8660"HK is also molecularly engineered to reduce stress and ultimately improve the reliability of multi"chip module (MCM) and system in package (SIP) devices.
In addition to achieving one of the lowest thermal resistances with thermal conductivity of over 8 W" m/°K, ESP8660"HK maintains its bond strength after 85%RH/85°C and demonstrates reliability test results after thermal cycling an d shock that are not common even for traditional paste die"attach adhesives.
