Vishay reveals 2mm by 2mm 20V Dual TrenchFET power MOSFET
The low RDSON device is suited for power management in mobile and other consumer application
Vishay Intertechnology has introduced a new dual n-channel TrenchFET power MOSFET in the ultra-compact, thermally enhanced PowerPAK SC-70 package.
Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix SiA936EDJ features one of the industry's lowest on-resistances for 20 V (12 V VGS and 8 V VGS) devices at 4.5 V and 2.5 V gate drives in the 2 mm by 2 mm footprint area.
The device is optimised for load and charger switches, DC/DC converters, and H-bridges and battery protection for power management in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, and handheld consumer electronics with small brushless DC motors.
For these applications the SiA936EDJ offers very low on-resistance of 34 milliohms at 4.5 V; 37 milliohms at 3.7 V, and 45 milliohms at 2.5 V, as well as built-in ESD protection of 2000 V. Its on-resistance at 2.5 V is 11.7 percent lower than the closest competing 8 V VGS device - while providing higher (G-S) guard band - and 15.1 percent lower than the closest competing device with a 12 V VGS.
The device's low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. By integrating two MOSFETs into one compact package, the dual SiA936EDJ simplifies designs, lowers the overall component count, and saves critical PCB space. The MOSFET is 100 % Rg-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.
Samples and production quantities of the SiA936EDJ are available now, with lead times of 12 to 14 weeks for larger orders.
https://www.flickr.com/photos/vishay/13316620434/sizes/l/
http://www.vishay.com/whatsnew/doc/npi_140311-NPI-MOSFET-SiA936EDJ.pdf
