News Article
Vishay releases first ThunderFET MOSFETs
The firm's first AEC-Q101-qualified 100 V n-channel power devices are designed to reduce switching losses and improve system efficiency. They are suited to automotive engine control units and flyback converters
Vishay Intertechnology has released its first AEC-Q101-qualified power MOSFETs to feature ThunderFET technology.
To increase efficiency and save space in automotive applications, Vishay claims its Siliconix 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L devices offer low on-resistance values available in the PowerPAK SO-8L and DPAK packages.
Vishay claims its ThunderFET technology enables low on-resistance per die area. In applications where lower on-resistance is crucial, this allows the SQD50N10-8m9L in the DPAK package to provide values down to 8.9 milliohms at 10 V.
When space is at a premium, the SQJ402EP and SQJ488EP offer values down to 11 milliohms at 10 V in a 5 mm by 6 mm PowerPAK SO-8L package, which is half the size of the DPAK.
With continuous drain currents to 50 A, the MOSFETs are optimised for injector boost applications in automotive engine control units and flyback converters for lighting ballasts in lighting control units.
A gate charge down to 18 nC enables the devices to provide low on-resistance times which are key for MOSFETs in DC/DC converter applications. The company says this reduces switching losses and improves total system efficiency.
The SQJ402EP, SQJ488EP, and SQD50N10-8m9L are 100 percent Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. The devices operate over a temperature range of -55 °C to +175 °C.
Samples and production quantities of the new automotive MOSFETs are available now, with lead times of sixteen weeks for large orders.
To increase efficiency and save space in automotive applications, Vishay claims its Siliconix 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L devices offer low on-resistance values available in the PowerPAK SO-8L and DPAK packages.
Vishay claims its ThunderFET technology enables low on-resistance per die area. In applications where lower on-resistance is crucial, this allows the SQD50N10-8m9L in the DPAK package to provide values down to 8.9 milliohms at 10 V.
When space is at a premium, the SQJ402EP and SQJ488EP offer values down to 11 milliohms at 10 V in a 5 mm by 6 mm PowerPAK SO-8L package, which is half the size of the DPAK.
With continuous drain currents to 50 A, the MOSFETs are optimised for injector boost applications in automotive engine control units and flyback converters for lighting ballasts in lighting control units.
A gate charge down to 18 nC enables the devices to provide low on-resistance times which are key for MOSFETs in DC/DC converter applications. The company says this reduces switching losses and improves total system efficiency.
The SQJ402EP, SQJ488EP, and SQD50N10-8m9L are 100 percent Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. The devices operate over a temperature range of -55 °C to +175 °C.
Samples and production quantities of the new automotive MOSFETs are available now, with lead times of sixteen weeks for large orders.
